Dr. Jehova Jire L.Hmar

Assistant Professor, Netaji Subhas University of Technology, INDIA

Title: Development of organic conducting polymer for flexible nonvolatile memory devices



The resistive switching memory has been investigated in conducting polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). Current-voltage (I-V) characteristics of the fabricated Al/PEDOT:PSS/ITO/ flexible PET substrate device reveal a non-volatile resistive switching behaviour. The memory device demonstrates transparency and flexibility with ON/OFF current ratio between the high resistance state (HRS) and low resistance state (LRS) of ~104 in magnitudes at a reading voltage of 1V. The charge transport mechanism of the fabricated non-volatile organic devices is governed by the space-charge limited conduction (SCLC). It has been suggested that the switching mechanism is due to the reduction and oxidation of PEDOT: PSS film. Interestingly, the performance of the memory device revealed no detectable degradation and remained identical even after bending the device from 70-1600 angles, representing excellent flexibility. This Al/PEDOT:PSS/ITO/ flexible PET substrate-based ReRAM (resistive random access memory) device exhibited high potential for future flexible non-volatile memory device applications.

Keywords: Conducting Polymer PEDOT:PSS, Flexible Nonvolatile Resistive switching Memory, Excellent Flexibility Memory Device


Dr. Jehova Jire L.Hmar presently working as Assistant Professor at Dept. Of Physics, Netaji Subhas University of Technology, New Delhi, India. He received doctoral degree from the National Institute of Technlogy, Agartala, India. His research prime objective is to synthesis, fabrication and characterization of semiconductor materials for electronic and optoelectronic applications. To his credit he has published more than 15 research papers in various international peer reviewed journals. He is in the panel of reviewers of a No. of SCI/SCIE/Scopus listed international journals.

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