Head-Rzhanov Institute of Semiconductor Physics, RUSSIA
Prof. Anatoly, from 1987 to till date working as Professor of Novosibirsk State University Radiation Physics of Semiconductors and Physics of Nanotechnology. In 2002, Prof. Anatoly appointed as the Deputy Director of Institute of Semiconductor Physics Siberian Branch of Russian Academy of Science and continuing to till date. From 1987 – 2002, he was the Head of laboratory of Non-equilibrium semiconductor systems in Institute of Semiconductor Physics, Novosibirsk. In 1974, Prof.Anatoly, received his PhD degree in Physics and Mathematics from the Institute of Semiconductor Physics (Candidate of Phys. Mathematical Science), Novosibirsk. He received his Doctor of Physics and Mathematics degree from the same Institute in 1988. In 2008 he was elected RAS Corresponding member in RAS department of nano- and information technologies on the speciality “Nanoelectronics”. •
Prof. Anatoly, received the highest award of the Soviet Union in Science, State Prize in 1988 on the results on physical phenomena at pulsed laser annealing of thin semiconductors layers, and International prize of academies of science of Soviet Union and German Democratic Republic.